A hole accelerator for InGaN/GaN light-emitting diodes

• Main Authors: Zhang, Zi-Hui, Liu, Wei, Tan, Swee Tiam, Zhang, Yiping, Ji, Yun, Wang, Liancheng, Zhu, Binbin, Lu, Shunpeng, Zhang, Xueliang, Hasanov, Namig, Sun, Xiao Wei, Demir, Hilmi Volkan
• Other Authors: School of Electrical and Electronic Engineering
• Format: Article
• Language: English
• Published: 2014
• Subjects: DRNTU::Engineering::Electrical and electronic engineering::Electric power
• Online Access: https://hdl.handle.net/10356/101663; http://hdl.handle.net/10220/24198
• Institution: Nanyang Technological University

The quantum efficiency of InGaN/GaN light-emitting diodes (LEDs) has been significantly limited by the insufficient hole injection, and this is caused by the inefficient p-type doping and the low hole mobility. The low hole mobility makes the holes less energetic, which hinders the hole injection in...