RF performance benchmarking of TSV integrated surface electrode ion trap for quantum computing

RF performance benchmarking of TSV integrated surface electrode ion trap for quantum computing

Surface electrode ion trap is highly promising for practical quantum computing due to its superior controllability on the trapped ions. With advanced microfabrication techniques, silicon has been developed as ion trap substrate for delicate surface electrodes design as well as monolithic electro-opt...

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書目詳細資料
Main Authors:	Zhao, Peng, Li, Hong Yu, Tao, Jing, Likforman, Jean-Pierre, Lim, Yu Dian, Seit, Wen Wei, Luca, Guidoni, Tan, Chuan Seng
其他作者:	School of Electrical and Electronic Engineering
格式:	Article
語言:	English
出版:	2021
主題:	Engineering::Electrical and electronic engineering Surface Electrode Ion Trap Finite Element Modeling
在線閱讀:	https://hdl.handle.net/10356/153006
標簽:	添加標簽沒有標簽, 成為第一個標記此記錄!

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