Effects of Si doping well beyond the Mott transition limit in GaN epilayers grown by plasma-assisted molecular beam epitaxy

Effects of Si doping well beyond the Mott transition limit in GaN epilayers grown by plasma-assisted molecular beam epitaxy

The effects of Si doping well beyond the Mott transition limit on the structural, electrical, and optical properties of plasma assisted molecular beam epitaxy grown GaN layers were studied. Si doping up to a doping density of <1.0 × 1020 cm-3 resulted in smooth surface morphologies and almost str...

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書目詳細資料
Main Authors:	Lingaparthi, R., Dharmarasu, Nethaji, Radhakrishnan, K., Zheng, Y.
其他作者:	School of Electrical and Electronic Engineering
格式:	Article
語言:	English
出版:	2022
主題:	Engineering::Electrical and electronic engineering Si Doping Molecular Beam Epitaxy
在線閱讀:	https://hdl.handle.net/10356/154964
標簽:	添加標簽沒有標簽, 成為第一個標記此記錄!
機構:	Nanyang Technological University
語言:	English

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