A highly ordered and damage-free Ge inverted pyramid array structure for broadband antireflection in the mid-infrared
With increasing demand for infrared (IR) photonics and optoelectronics, germanium (Ge) has recently regained attention due to its outstanding optical properties in the near infrared (NIR) and mid infrared (MIR) ranges. Here we present a highly ordered and damage-free microscale Ge inverted pyramid a...
Saved in:
Main Authors: | Shin, Sang-Ho, Liao, Yikai, Son, Bongkwon, Zhao, Zhi-Jun, Jeong, Jun-Ho, Tan, Chuan Seng, Kim, Munho |
---|---|
Other Authors: | School of Electrical and Electronic Engineering |
Format: | Article |
Language: | English |
Published: |
2022
|
Subjects: | |
Online Access: | https://hdl.handle.net/10356/156882 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Institution: | Nanyang Technological University |
Language: | English |
Similar Items
-
A heavily doped germanium pyramid array for tunable optical antireflection in the broadband mid-infrared range
by: Son, Bongkwon, et al.
Published: (2022) -
Producing microscale Ge textures via titanium nitride- and nickel-assisted chemical etching with CMOS-compatibiliyty
by: Liao, Yikai, et al.
Published: (2022) -
Anti-reflective porous Ge by open-circuit and lithography-free metal-assisted chemical etching
by: Zhang, Yi-Yu, et al.
Published: (2022) -
Tunable antireflection from conformal Al-doped ZnO films on nanofaceted Si templates
by: Basu, T, et al.
Published: (2020) -
Atomically thin noble metal dichalcogenide: a broadband mid-infrared semiconductor
by: Yu, Xuechao, et al.
Published: (2018)