Recent advances in single crystal narrow band-gap semiconductor nanomembranes and their flexible optoelectronic device applications: Ge, GeSn, InGaAs, and 2D materials

Recent advances in single crystal narrow band-gap semiconductor nanomembranes and their flexible optoelectronic device applications: Ge, GeSn, InGaAs, and 2D materials

Flexible optoelectronics have attracted much attention in recent years for their potential applications in healthcare and wearable devices. Narrow bandgap (NBG) semiconductor nanomembranes (NMs) are promising candidates for flexible near-infrared (NIR) applications due to their light weight, bendabi...

Saved in:

書目詳細資料
Main Authors:	An, Shu, Park, Hyunjung, Kim, Munho
其他作者:	School of Electrical and Electronic Engineering
格式:	Article
語言:	English
出版:	2023
主題:	Engineering::Electrical and electronic engineering Band Gap Energy Flexible Optoelectronics
在線閱讀:	https://hdl.handle.net/10356/170167
標簽:	添加標簽沒有標簽, 成為第一個標記此記錄!
機構:	Nanyang Technological University
語言:	English

相似書籍

Strain-free GeSn nanomembranes enabled by transfer-printing techniques for advanced optoelectronic applications
由: Tai, Yeh-Chen, et al.
出版: (2021)

Flexible germanium (Ge) nanomembranes and devices
由: Mak, Sin Hua
出版: (2024)

Strain-relaxed GeSn-on-insulator (GeSnOI) microdisks
由: Burt, Daniel, et al.
出版: (2022)

High-performance GeSn photodetector and fin field-effect transistor (FinFET) on an advanced GeSn-on-insulator platform
由: Wang, Wei, et al.
出版: (2019)

Strain profile and size dependent electronic band structure of GeSn/SiSn quantum dots for optoelectronic application
由: Tan, Chuan Seng, et al.
出版: (2015)

Tensile strained direct bandgap GeSn microbridges enabled in GeSn-on-insulator substrates with residual tensile strain
由: Burt, Daniel, et al.
出版: (2023)

Monolithic infrared silicon photonics: the rise of (Si)GeSn semiconductors
由: Moutanabbir, Oussama, et al.
出版: (2023)

Uniaxial strain on graphene: Raman spectroscopy study and band-gap opening
由: Ni, Z.H., et al.
出版: (2014)

Modulation of light absorption in flexible GeSn metal–semiconductor–metal photodetectors by mechanical bending
由: An, Shu, et al.
出版: (2021)

Metal-semiconductor-metal GeSn photodetectors on silicon for short-wave infrared applications
由: Ghosh, Soumava, et al.
出版: (2020)

Enhanced GeSn microdisk lasers directly released on Si
由: Kim, Youngmin, et al.
出版: (2022)

Review of Si-based GeSn CVD growth and optoelectronic applications
由: Miao, Yuanhao, et al.
出版: (2022)

The DFT Study of Electronic and Optical Properties of the Surface Functional SiGe, GeSn and GeSn Nanostructures
由: Roohan Thirayatorn, et al.
出版: (2020)

Transfer-printing-enabled GeSn flexible resonant-cavity-enhanced photodetectors with strain-amplified mid-infrared optical responses
由: Tai, Yeh-Chen, et al.
出版: (2023)

Short-wave infrared cavity resonances in a single GeSn nanowire
由: Kim, Youngmin, et al.
出版: (2023)

1D photonic crystal direct bandgap GeSn-on- insulator laser
由: Joo, Hyo-Jun, et al.
出版: (2022)

Extended-SWIR GeSn LEDs with reduced footprint and efficient operation power
由: Atalla, Mahmoud R. M., et al.
出版: (2023)

Flexible TiN/Ge photodetectors with enhanced responsivity via localized surface plasmon resonance and strain modulation
由: Kim, You Jin, et al.
出版: (2023)

All-optical band engineering of gapped Dirac materials
由: Kibis, O. V., et al.
出版: (2017)

The band-gap modulation of graphyne nanoribbons by edge quantum entrapment
由: Liu, Yonghui, et al.
出版: (2018)

Modeling of electromagnetic band gap structure devices tuned by ferrite cylinders
由: Wang, Q., et al.
出版: (2014)

High-performance GeSn photodetector and fin field-effect transistor (FinFET) on an advanced GeSn-on-insulator platform
由: Wang, W., et al.
出版: (2022)

Research on two-photon absorption enhancement of CdS in one-dimensional photonic band gap structures
由: Shen, J., et al.
出版: (2014)

Integration of high-K oxides with wide band-gap semiconductors
由: CHEN QIAN
出版: (2011)

Systematic study on photoexcited carrier dynamics related to defects in GeSn Films with low Sn content at room temperature
由: Son, Bongkwon, et al.
出版: (2021)

Germanium-tin (GeSn) p-channel fin field-effect transistor fabricated on a novel GeSn-on-insulator substrate
由: Lei, Dian, et al.
出版: (2020)

Rigid-elastic combined metamaterial beam with tunable band gaps for broadband vibration suppression
由: Zhang, Jiazhen, et al.
出版: (2024)

Strain relaxation of germanium-tin (GeSn) fins
由: Kang, Yuye, et al.
出版: (2018)

Thermal stability of germanium-tin (GeSn) fins
由: Lei, Dian, et al.
出版: (2018)

GeSn/GaAs hetero-structure by magnetron sputtering
由: Qian, Li, et al.
出版: (2021)

Investigation of the photoluminescence and absorption spectrum of GeSn nanoplatelets
由: Lim, Sherleen Ting Wei
出版: (2023)

GeSn alloys fabricated by modified sputtering deposition
由: Qian, Li
出版: (2020)

Strain relaxation of germanium-tin (GeSn) fins
由: Kang, Y, et al.
出版: (2020)

Influence of hydrogen surface passivation on Sn segregation, aggregation, and distribution in GeSn/Ge(001) materials
由: Johll, H., et al.
出版: (2016)

Nanoparticle composites: FePt with wide-band-gap semiconductor
由: Lu, M., et al.
出版: (2014)

GaAs/GeSn/Ge n-i-p diodes and light emitting diodes formed via grafting
由: Zhou, Jie, et al.
出版: (2024)

Biaxial strain effect on band structures and optical properties of GeSn/Ge quantum well
由: Ting, Shi En
出版: (2024)

GeSn-on-insulator substrate formed by direct wafer bonding
由: Lee, Kwang Hong, et al.
出版: (2016)

Extending Si CMOS: InGaAs and GeSn High Mobility Channel Transistors for Future High Speed and Low Power Applications
由: GONG XIAO
出版: (2013)

High-performance GE/GESN photodetectors in near- and mid-infrared range
由: Son, Bongkwon
出版: (2022)