Chemical mechanical polishing process of copper metallization in the ULSI devices

Chemical mechanical polishing process of copper metallization in the ULSI devices

Explore techniques capable of reducing Cu dishing significantly. All techniques studied will focus on minimizing both topology and Cu interconnect sheet resistance. Factors affecting Cu removal and hence topology would also be investigated.

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Bibliographic Details
Main Author: Leow, Nelson Whatt Wei.
Other Authors: Park, Hun Sub
Format: Theses and Dissertations
Published: 2008
Subjects:
DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Nanoelectronics and interconnects
Online Access:http://hdl.handle.net/10356/5072
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Institution: Nanyang Technological University
Description
Summary:Explore techniques capable of reducing Cu dishing significantly. All techniques studied will focus on minimizing both topology and Cu interconnect sheet resistance. Factors affecting Cu removal and hence topology would also be investigated.

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