Chemical mechanical polishing process of copper metallization in the ULSI devices

Explore techniques capable of reducing Cu dishing significantly. All techniques studied will focus on minimizing both topology and Cu interconnect sheet resistance. Factors affecting Cu removal and hence topology would also be investigated.

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Bibliographic Details
Main Author:	Leow, Nelson Whatt Wei.
Other Authors:	Park, Hun Sub
Format:	Theses and Dissertations
Published:	2008
Subjects:	DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Nanoelectronics and interconnects
Online Access:	http://hdl.handle.net/10356/5072
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Institution:	Nanyang Technological University

id	sg-ntu-dr.10356-5072
record_format	dspace
spelling	sg-ntu-dr.10356-50722023-03-04T16:31:52Z Chemical mechanical polishing process of copper metallization in the ULSI devices Leow, Nelson Whatt Wei. Park, Hun Sub School of Materials Science & Engineering DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Nanoelectronics and interconnects Explore techniques capable of reducing Cu dishing significantly. All techniques studied will focus on minimizing both topology and Cu interconnect sheet resistance. Factors affecting Cu removal and hence topology would also be investigated. Master of Engineering (MSE) 2008-09-17T10:19:12Z 2008-09-17T10:19:12Z 2004 2004 Thesis http://hdl.handle.net/10356/5072 Nanyang Technological University 116 p. application/pdf
institution	Nanyang Technological University
building	NTU Library
continent	Asia
country	Singapore Singapore
content_provider	NTU Library
collection	DR-NTU
topic	DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Nanoelectronics and interconnects
spellingShingle	DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Nanoelectronics and interconnects Leow, Nelson Whatt Wei. Chemical mechanical polishing process of copper metallization in the ULSI devices
description	Explore techniques capable of reducing Cu dishing significantly. All techniques studied will focus on minimizing both topology and Cu interconnect sheet resistance. Factors affecting Cu removal and hence topology would also be investigated.
author2	Park, Hun Sub
author_facet	Park, Hun Sub Leow, Nelson Whatt Wei.
format	Theses and Dissertations
author	Leow, Nelson Whatt Wei.
author_sort	Leow, Nelson Whatt Wei.
title	Chemical mechanical polishing process of copper metallization in the ULSI devices
title_short	Chemical mechanical polishing process of copper metallization in the ULSI devices
title_full	Chemical mechanical polishing process of copper metallization in the ULSI devices
title_fullStr	Chemical mechanical polishing process of copper metallization in the ULSI devices
title_full_unstemmed	Chemical mechanical polishing process of copper metallization in the ULSI devices
title_sort	chemical mechanical polishing process of copper metallization in the ulsi devices
publishDate	2008
url	http://hdl.handle.net/10356/5072
_version_	1759854640096083968

Chemical mechanical polishing process of copper metallization in the ULSI devices

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