Chemical mechanical polishing process of copper metallization in the ULSI devices
Explore techniques capable of reducing Cu dishing significantly. All techniques studied will focus on minimizing both topology and Cu interconnect sheet resistance. Factors affecting Cu removal and hence topology would also be investigated.
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Format: | Theses and Dissertations |
Published: |
2008
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Online Access: | http://hdl.handle.net/10356/5072 |
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Institution: | Nanyang Technological University |
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