Investigation of resistive switching and conduction mechanisms in oxide-based RRAM device for emerging nonvolatile memory applications

• Main Author: Fang, Zheng
• Other Authors: Yu Hongyu
• Format: Theses and Dissertations
• Language: English
• Published: 2013
• Subjects: DRNTU::Engineering::Electrical and electronic engineering; DRNTU::Engineering::Electrical and electronic engineering::Microelectronics
• Online Access: https://hdl.handle.net/10356/54664
• Institution: Nanyang Technological University

This thesis introduces fabrication and physical as well as electrical characterizations of oxide-based resistive random access memory (RRAM) which has been recently explored as one of the most promising nonvolatile memory technology. The objective of this thesis focus on the device fabrication and i...