Void density investigation of low temperature InP (chip) /Al2O3/Si (wafer) direct bonding
Silicon photonics has attracted extensive research attention due to its advantages of lower single delay and power consumption, higher level of integration and, as a consequence, more diversifiedfunctionalities. However, InP on Si direct wafer bonding, as one of the promising approach to achieve III...
Saved in:
Main Author: | Shang, Ling Ru |
---|---|
Other Authors: | Tang Xiao Hong |
Format: | Final Year Project |
Language: | English |
Published: |
2015
|
Subjects: | |
Online Access: | http://hdl.handle.net/10356/64062 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Institution: | Nanyang Technological University |
Language: | English |
Similar Items
-
Low temperature InP (chip) / Al2O3 / Si (wafer) direct bonding
by: Lin, Yiding
Published: (2015) -
Homogeneous chip to wafer bonding of InP-Al2O3-Si using UV/O3 activation
by: Tan, Chuan Seng, et al.
Published: (2014) -
UV/O3 assisted InP/Al2O3–Al2O3/Si low temperature die to wafer bonding
by: Anantha, P., et al.
Published: (2015) -
Geometry and thermal stress analysis of in-plane outgassing channels in Al2O3-intermediated InP (die)-to-Si (wafer) bonding
by: Lin, Yiding, et al.
Published: (2019) -
Thermal Characteristics of InP-Al2O3/Si Low Temperature Heterogeneous Direct Bonding for Photonic Device Integration
by: Fan, J., et al.
Published: (2016)