250 MHZ to 30 GHZ, unilateral circuitmodel for InGaP/GaAs HBT
A unilateral circuit model, which precisely predicts small signal response over a wide range of frequencies and bias points, is quantitatively analyzed and presented. The shortfall of current unilateral assumption and transformation technique is presented. A complete and explicit analysis is provide...
Saved in:
Main Authors: | Thein, Than Tun, Law, Choi Look, Fu, Kai |
---|---|
Other Authors: | School of Electrical and Electronic Engineering |
Format: | Article |
Language: | English |
Published: |
2013
|
Subjects: | |
Online Access: | https://hdl.handle.net/10356/79826 http://hdl.handle.net/10220/12219 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Institution: | Nanyang Technological University |
Language: | English |
Similar Items
-
A study of InGaP/GaAs/InGaP composite collector double heterojunction bipolar transistor and GaAs delta-doped emitter bipolar junction transistor
by: Lew, Kim Luong.
Published: (2008) -
AlGaAs/GaAs HBT model estimation through the generalized pencil-of-function method
by: Ooi, B.L., et al.
Published: (2014) -
Novel approach for determining the AlGaAs/GaAs HBT small-signal equivalent circuit elements
by: Zhou, T.S., et al.
Published: (2014) -
MOCVD growth of InGaP/GaAs heterojunction bipolar transistors on 200 mm Si wafers for heterogeneous integration with Si CMOS
by: Loke, Wan Khai, et al.
Published: (2020) -
High-frequency characteristics of InGaP/GaAs double heterojunction bipolar transistor epitaxially grown on 200 mm Ge/Si wafers
by: Loke, Wan Khai, et al.
Published: (2020)