Atomic scale modulation of self‐rectifying resistive switching by interfacial defects

• Main Authors: Wu, Xing, Yu, Kaihao, Cha, Dongkyu, Bosman, Michel, Raghavan, Nagarajan, Zhang, Xixiang, Li, Kun, Liu, Qi, Sun, Litao, Pey, Kinleong
• Other Authors: School of Electrical and Electronic Engineering
• Format: Article
• Language: English
• Published: 2018
• Subjects: Hafnium Dioxide; In Situ Transmission Electron Microscopy
• Online Access: https://hdl.handle.net/10356/87819; http://hdl.handle.net/10220/45500
• Institution: Nanyang Technological University

Higher memory density and faster computational performance of resistive switching cells require reliable array‐accessible architecture. However, selecting a designated cell within a crossbar array without interference from sneak path currents through neighboring cells is a general problem. Here, a h...