Shape effects on the electronic structure and the optical gain of InAsN/GaAs nanostructures : from a quantum lens to a quantum ring
The electronic structures of self-assembled InAs1−xNx/GaAs nanostructures from quantum lens to quantum rings (QRs) are calculated using the 10-band k.p method and the valence force field (VFF) method. With the variation of shape of the nanostructure and nitrogen (N) content, it shows that the N and...
Saved in:
Main Authors: | Xu, Q., Zhang, X. W., Li, S. S., Chen, Jian, Fan, Weijun, Xia, Jian-Bai |
---|---|
其他作者: | School of Electrical and Electronic Engineering |
格式: | Article |
語言: | English |
出版: |
2013
|
主題: | |
在線閱讀: | https://hdl.handle.net/10356/96490 http://hdl.handle.net/10220/10301 |
標簽: |
添加標簽
沒有標簽, 成為第一個標記此記錄!
|
相似書籍
-
Electronic structure and optical gain saturation of InAs[sub 1−x]N[sub x]/GaAs quantum dots
由: Zhang, X. W., et al.
出版: (2013) -
GaAs/AlAs/AlGaAs quantum well infrared photodetector
由: Fan, Weijun
出版: (2008) -
Band structures and optical gain of strained GaAs[sub x]P[sub 1−x−y]N[sub y]/GaP quantum wells
由: Zhu, Yuan-Hui, et al.
出版: (2013) -
Intersubband transitions in InGaAsN/GaAs quantum wells
由: Liu, W., et al.
出版: (2013) -
Investigation of optical gain of GaInNAs/GaAs compressive-strained quantum wells
由: Fan, W.J., et al.
出版: (2014)