In0.17Al0.83N/AlN/GaN triple T-shape Fin-HEMTs with gm=646 mS/mm, ION=1.03A/mm, IOFF=1.13 μA/mm, SS=82 mV/dec and DIBL=28 mV/V at VD=0.5 V

In0.17Al0.83N/AlN/GaN triple T-shape Fin-HEMTs with gm=646 mS/mm, ION=1.03A/mm, IOFF=1.13 μA/mm, SS=82 mV/dec and DIBL=28 mV/V at VD=0.5 V

We report the first 3D Triple T-gate InAlN/GaN nano-channel (NC) Fin-HEMTs on Si substrate with record high device performances at VD as low as 0.5 V. Utilizing a T-gate approach on NC Fin-HEMT with stress engineered techniques, enhanced device transport properties with gm=646 mS/mm, Ion=1.03 A/mm,...

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書目詳細資料
Main Authors:	Teo, Khoon Leng, Ng, Geok Ing, Ranjan, Kumud, Shoron, O. F., Arulkumaran, Subramaniam, Rajan, S., Dolmanan, S. B., Manoj Kumar, Chandra Mohan, Tripathy, S.
其他作者:	2014 IEEE International Electron Devices Meeting (IEDM)
格式:	Conference or Workshop Item
語言:	English
出版:	2015
主題:	DRNTU::Engineering::Electrical and electronic engineering::Semiconductors
在線閱讀:	https://hdl.handle.net/10356/98332 http://hdl.handle.net/10220/25663
標簽:	添加標簽沒有標簽, 成為第一個標記此記錄!

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