Suppressed crystallization of Hf-based gate dielectrics by controlled addition of Al2O3 using atomic layer deposition
10.1063/1.1522826
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sg-nus-scholar.10635-1072192024-11-10T12:34:46Z Suppressed crystallization of Hf-based gate dielectrics by controlled addition of Al2O3 using atomic layer deposition Ho, M.-Y. Gong, H. Wilk, G.D. Busch, B.W. Green, M.L. Lin, W.H. See, A. Lahiri, S.K. Loomans, M.E. Räisänen, P.I. Gustafsson, T. MATERIALS SCIENCE 10.1063/1.1522826 Applied Physics Letters 81 22 4218-4220 APPLA 2014-10-29T08:41:08Z 2014-10-29T08:41:08Z 2002-11-25 Article Ho, M.-Y., Gong, H., Wilk, G.D., Busch, B.W., Green, M.L., Lin, W.H., See, A., Lahiri, S.K., Loomans, M.E., Räisänen, P.I., Gustafsson, T. (2002-11-25). Suppressed crystallization of Hf-based gate dielectrics by controlled addition of Al2O3 using atomic layer deposition. Applied Physics Letters 81 (22) : 4218-4220. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1522826 00036951 http://scholarbank.nus.edu.sg/handle/10635/107219 000179340800040 Scopus |
| institution |
National University of Singapore |
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NUS Library |
| continent |
Asia |
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Singapore Singapore |
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NUS Library |
| collection |
ScholarBank@NUS |
| description |
10.1063/1.1522826 |
| author2 |
MATERIALS SCIENCE |
| author_facet |
MATERIALS SCIENCE Ho, M.-Y. Gong, H. Wilk, G.D. Busch, B.W. Green, M.L. Lin, W.H. See, A. Lahiri, S.K. Loomans, M.E. Räisänen, P.I. Gustafsson, T. |
| format |
Article |
| author |
Ho, M.-Y. Gong, H. Wilk, G.D. Busch, B.W. Green, M.L. Lin, W.H. See, A. Lahiri, S.K. Loomans, M.E. Räisänen, P.I. Gustafsson, T. |
| spellingShingle |
Ho, M.-Y. Gong, H. Wilk, G.D. Busch, B.W. Green, M.L. Lin, W.H. See, A. Lahiri, S.K. Loomans, M.E. Räisänen, P.I. Gustafsson, T. Suppressed crystallization of Hf-based gate dielectrics by controlled addition of Al2O3 using atomic layer deposition |
| author_sort |
Ho, M.-Y. |
| title |
Suppressed crystallization of Hf-based gate dielectrics by controlled addition of Al2O3 using atomic layer deposition |
| title_short |
Suppressed crystallization of Hf-based gate dielectrics by controlled addition of Al2O3 using atomic layer deposition |
| title_full |
Suppressed crystallization of Hf-based gate dielectrics by controlled addition of Al2O3 using atomic layer deposition |
| title_fullStr |
Suppressed crystallization of Hf-based gate dielectrics by controlled addition of Al2O3 using atomic layer deposition |
| title_full_unstemmed |
Suppressed crystallization of Hf-based gate dielectrics by controlled addition of Al2O3 using atomic layer deposition |
| title_sort |
suppressed crystallization of hf-based gate dielectrics by controlled addition of al2o3 using atomic layer deposition |
| publishDate |
2014 |
| url |
http://scholarbank.nus.edu.sg/handle/10635/107219 |
| _version_ |
1821197309934829568 |