High-mobility Germanium-Tin Field-Effect Transistors: Surface Passivation, Contact, and Doping Technologies

High-mobility Germanium-Tin Field-Effect Transistors: Surface Passivation, Contact, and Doping Technologies

Ph.D

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Bibliographic Details
Main Author:	WANG LANXIANG
Other Authors:	NUS GRAD SCH FOR INTEGRATIVE SCI & ENGG
Format:	Theses and Dissertations
Language:	English
Published:	2014
Subjects:	High mobility, germanium-tin, filed-effect transistors, surface passivation, contact technology, doping technology
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/113278
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Institution:	National University of Singapore
Language:	English

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