GAN-ON- SI(100) NANOSTRUCTURES FOR OPTOELECTRONICS APPLICATIONS

GAN-ON- SI(100) NANOSTRUCTURES FOR OPTOELECTRONICS APPLICATIONS

Ph.D

Saved in:

Bibliographic Details
Main Author:	KWADWO KONADU ANSAH-ANTWI
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Theses and Dissertations
Language:	English
Published:	2015
Subjects:	GaN, Heteroepitaxy, Surface modification, Anisotropic etching, Dislocations, Crystallographic tilt
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/120109
Tags:	Add Tag No Tags, Be the first to tag this record!
Institution:	National University of Singapore
Language:	English

Similar Items

Influence of Silicon Nanostructures on the Growth of GaN on Silicon
by: WEE QIXUN
Published: (2014)

Vertical GaN-on-GaN Schottky diodes as α-particle radiation sensors
by: Sandupatla, Abhinay, et al.
Published: (2020)

Characterization of gallium nitride grown on sapphire and GaN substrates
by: TAN LAY THENG
Published: (2010)

Comments on "thermal resistance calculation of AlGaN-GaN devices"
by: Yin, W.-Y., et al.
Published: (2014)

Identification of defects in GaN and its ternary and quaternary alloy grown on different substrates
by: SOH CHEW BENG
Published: (2010)

Optical and structural properties of GaN materials and structures grown on Si by metalorganic chemical vapor deposition
by: Feng, Z.C., et al.
Published: (2014)

Enhanced performance of ultraviolet AlGaN/GaN photo-HEMTs by optimized channel isolation schemes
by: Mondal, Ramit Kumar, et al.
Published: (2024)

GROWTH AND SIMULATION STUDY OF GAN ON V-GROOVE PATTERNED SILICON (100) SUBSTRATES AND ITS APPLICATIONS
by: LI SHIJU
Published: (2017)

Surface morphology evolution of N-polar GaN on SiC for HEMT heterostructures grown by plasma-assisted molecular beam epitaxy
by: Huo, Lili, et al.
Published: (2023)

100 mV Ultra-Low Bias AlGaN/GaN Photodetector Based on Fin-Shaped Capacitor Configuration for Future Integrated Optoelectronics
by: Pu, Yuhan, et al.
Published: (2023)

GaN-based semiconductor saturable absorber mirror operating around 415 nm
by: Xiang, N., et al.
Published: (2014)

Improved reliability of AlGaN/GaN-on-Si high electron mobility transistors (HEMTs) with high density silicon nitride passivation
by: Sasangka, W. A., et al.
Published: (2017)

Investigation of optical properties of nanoporous GaN films
by: Vajpeyi, A.P., et al.
Published: (2014)

AlGaN/GaN HEMT-based ultraviolet photodetectors with enhanced device efficiency
by: Ahmed Salah Hawash Razeen
Published: (2024)

Advantages of the Blue InGaN/GaN Light-Emitting Diodes with an AlGaN/GaN/AlGaN Quantum Well Structured Electron Blocking Layer
by: Ju, Zhen Gang, et al.
Published: (2016)

Telecom single-photon emitters in GaN operating at room temperature: Embedment into bullseye antennas
by: Meunier, Max, et al.
Published: (2023)

Investigation of self-heating effect on DC and RF performances in AlGaN/GaN HEMTs on CVD-Diamond
by: Ranjan, Kumud, et al.
Published: (2020)

Impact of carbon impurities on the initial leakage current of AlGaN/GaN high electron mobility transistors
by: Gao, Yu, et al.
Published: (2019)

Effects of gate field plates on the surface state related current collapse in AlGaN/GaN HEMTs
by: Huang, H., et al.
Published: (2014)

Photoreflectance study of band-gap renormalization in Si-doped GaN
by: Zhang, X., et al.
Published: (2014)

Impact of Al2O3 incorporation on device performance of HfO2 gate dielectric AlGaN/GaN MIS-HFETs
by: Tian, F., et al.
Published: (2014)

AlGaN/GaN high electron mobility transistors with implanted ohmic contacts
by: Wang, H.T., et al.
Published: (2014)

Integration of Indium Gallium Nitride with Nanostructures on Silicon Substrates for Potential Photovoltaic Applications
by: HO JIAN WEI
Published: (2015)

Variable range hopping-assisted parasitic channel leakage in AlN/GaN/AlGaN HEMTs on Si
by: Liu, Siyu, et al.
Published: (2024)

Effects of chemical and plasma surface treatments on the O2-annealed Ni/Au contact to p-Gan
by: Lim, J., et al.
Published: (2014)

Dislocation cross-slip in heteroepitaxial multilayer films
by: Quek, S.S., et al.
Published: (2014)

STUDY OF CMOS COMPATIBLE RUTHENIUM OXIDE SCHOTTKY CONTACTS FOR ALGAN/GAN AND INALN/GAN DIODES AND HIGH MOBILITY TRANSISTORS GROWN ON SILICON (111) SUBSTRATES
by: LWIN MIN KYAW
Published: (2015)

Application of ion implantation to the fabrication of GAN-based devices
by: WANG HAITING
Published: (2010)

Study on InGaN/GaN quantum structures and their applications in semiconductor saturable absorber mirror
by: LIN FEN
Published: (2010)

Investigation of V-defects formation in InGaN/GaN multiple quantum well grown on sapphire
by: Yong, A.M., et al.
Published: (2014)

Identification of deep levels in π-GaN epilayers
by: Soh, C.B., et al.
Published: (2014)

Fabrication and characterization of AIGaN/GaN HEMTs
by: HOY KIN MENG, DERRICK
Published: (2010)

Au-free normally-off AlGaN/GaN-on-Si MIS-HEMTs using combined partially recessed and fluorinated trap-charge gate structures
by: Huang, H., et al.
Published: (2014)

Analytical modelling of high temperature characteristics on the DC responses for Schottky-gate AlGaN/GaN HEMT devices
by: Wang, Y.-H., et al.
Published: (2014)

Experimental and modeling investigations of miniaturization in InGaN/GaN light-emitting diodes and performance enhancement by micro-wall architecture
by: Zhang, Yiping, et al.
Published: (2021)

Investigation of the role of pre-existing oxide in the initial degradation mechanism in AlGaN/GaN HEMTs under ON-state stress
by: Tan, H. T., et al.
Published: (2024)

Ion channeling studies of defect formation in GaN and related materials
by: MUKHTAR AHMED RANA
Published: (2011)

APPLICATIONS OF PLASMONICS FOR TERAHERTZ DETECTION, MODULATION AND WAVEGUIDING
by: HOU HAOWEN
Published: (2017)

MOCVD growth and characterization of wide band gap group III-nitride semiconductors
by: LI PENG
Published: (2010)

Infrared reflectance analysis of GaN epitaxial layers grown on sapphire and silicon substrates
by: Feng, Z.C., et al.
Published: (2014)