C-V MEASUREMENTS OF ULTRA THIN GATE MOSFETS (METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR)

C-V MEASUREMENTS OF ULTRA THIN GATE MOSFETS (METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR)

Master's

محفوظ في:

التفاصيل البيبلوغرافية
المؤلف الرئيسي:	VU NGUYEN TUAN HA
مؤلفون آخرون:	SINGAPORE-MIT ALLIANCE
التنسيق:	Theses and Dissertations
منشور في:	2019
الوصول للمادة أونلاين:	https://scholarbank.nus.edu.sg/handle/10635/153956
الوسوم:	إضافة وسم لا توجد وسوم, كن أول من يضع وسما على هذه التسجيلة!
المؤسسة:	National University of Singapore

مواد مشابهة

Characterization of deep submicron MOSFET with ultra thin gate oxide
بواسطة: Sun, Quan.
منشور في: (2010)

Self-aligned contact metallization technology for III-V metal-oxide-semiconductor field effect transistors
بواسطة: Zhang, X., وآخرون
منشور في: (2014)

Impact of decoupled plasma nitridation of ultra-thin gate oxide on the performance of p-channel MOSFETs
بواسطة: Lek, C.M., وآخرون
منشور في: (2014)

Thin gate oxide based carbon nanotube field effect transistors
بواسطة: Soh, Candy Shia Leng.
منشور في: (2009)

Design, simulation and fabrication of ultra thin fin for double gate MOSFETS
بواسطة: AGRAWAL NAVEEN
منشور في: (2010)

Modeling and characterization of direct tunneling hole current through ultrathin gate oxide in p-metal-oxide-semiconductor field-effect transistors
بواسطة: Hou, Y.T., وآخرون
منشور في: (2014)

HOT-CARRIER EFFECTS IN THIN GATE OXIDE MOSFET'S
بواسطة: SEE LENG KIAN
منشور في: (2020)

Germanium nanowire metal-oxide-semiconductor field-effect transistor fabricated by complementary-metal-oxide-semiconductor-compatible process
بواسطة: Peng, J.W., وآخرون
منشور في: (2014)

Strained germanium-tin (GeSn) p-channel metal-oxide-semiconductor field-effect-transistors (p-MOSFETs) with ammonium sulfide passivation
بواسطة: Wang, L., وآخرون
منشور في: (2014)

Alteration of gate-oxide trap capture/emission time constants by channel hot-carrier effect in the metal-oxide-semiconductor field-effect transistor
بواسطة: Ju, Xin, وآخرون
منشور في: (2021)

Gate-all-around quantum-wire field-effect transistor with dopant segregation at metal-semiconductor-metal heterostucture
بواسطة: Wong, H.-S., وآخرون
منشور في: (2014)

Fabrication of gate stack with high gate work function for implantless enhancement-mode GaAs n -channel metal-oxide-semiconductor field effect transistor applications
بواسطة: Zhu, M., وآخرون
منشور في: (2014)

Simulation and optimization of silicon carbide metal oxide semiconductor field effect transistors
بواسطة: Zhu,Taolue
منشور في: (2020)

Characterization of negative bias temperature instability in ultra-thin oxynitride gate P-MOSFETs
بواسطة: Wang, Shuang
منشور في: (2009)

Dual Poly-Si Gate Metal Oxide Semiconductor Field Effect Transistors Fabricated with High-Quality Chemical Vapor Deposition HfO 2 Gate Dielectrics
بواسطة: Lee, S., وآخرون
منشور في: (2014)

AlGan/Gan metal-oxide-semiconductor high electron mobility transistors (MOS-HEMTs) with novel gate oxides
بواسطة: LIU CHANG
منشور في: (2010)

In-situ surface passivation and metal-gate/high-k dielectric stack formation for N-channel gallium arsenide metal-oxide-semiconductor field-effect transistors
بواسطة: Chin, H.-C., وآخرون
منشور في: (2014)

Ge₀.₉₅Sn₀.₀₅ gate-all-around p-channel metal-oxide-semiconductor field-effect transistors with sub-3 nm nanowire width
بواسطة: Kang, Yuye, وآخرون
منشور في: (2022)

Physical model for frequency-dependent dynamic charge trapping in metal-oxide-semiconductor field effect transistors with HfO 2 gate dielectric
بواسطة: Shen, C., وآخرون
منشور في: (2014)

Scaling Parameter Dependent Drain Induced Barrier Lowering Effect in Double-Gate Silicon-on-Insulator Metal-Oxide-Semiconductor Field Effect Transistor
بواسطة: Samudra, G., وآخرون
منشور في: (2014)

Scaling Parameter Dependent Drain Induced Barrier Lowering Effect in Double-Gate Silicon-on-Insulator Metal-Oxide-Semiconductor Field Effect Transistor
بواسطة: Samudra, G., وآخرون
منشور في: (2014)

Ultimate performance projection of ballistic III-V ultra-thin-body MOSFET
بواسطة: Guo, Y., وآخرون
منشور في: (2014)

ADVANCED GERMANIUM-TIN P-CHANNEL METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS
بواسطة: LEI DIAN
منشور في: (2018)

Pseudo-potential band structure calculation of InSb ultra-thin films and its application to assess the n-metal-oxide-semiconductor transistor performance
بواسطة: Zhu, Z.G., وآخرون
منشور في: (2014)

Theoretical analyses of oxide-bypassed superjunction power metal oxide semiconductor field effect transistor devices
بواسطة: Chen, Y., وآخرون
منشور في: (2014)

Comparison between chemical vapor deposited and physical vapor deposited WSi2 metal gate for InGaAs n-metal-oxide-semiconductor field-effect transistors
بواسطة: Ong, B. S., وآخرون
منشور في: (2017)

Energy distribution of interface traps in germanium metal-oxide- semiconductor field effect transistors with HfO2 gate dielectric and its impact on mobility
بواسطة: Xie, R., وآخرون
منشور في: (2014)

High-Performance Top-Gated and Double-Gated Oxide–Semiconductor Ferroelectric Field-Effect Transistor Enabled by Channel Defect Self-Compensation Effect
بواسطة: ChunKuei CHEN
منشور في: (2023)

Investigation of wide bandgap device (Silicon Carbide Metal Oxide Semiconductor Field Effect Transistor)
بواسطة: Chan, Matthew Nigel Zhen Yu
منشور في: (2022)

Technology options for reducing contact resistances in nanoscale metal-oxide-semiconductor field-effect transistors
بواسطة: Yeo, Y.-C.
منشور في: (2014)

Inversion-mode self-aligned In0.53Ga0.47 As N-channel metal-oxide-semiconductor field-effect transistor with HfAlO gate dielectric and TaN metal gate
بواسطة: Lin, J.Q., وآخرون
منشور في: (2014)

Triggering voltage for post-breakdown random telegraph noise in HfLaO dielectric metal gate metal-oxide-semiconductor field effect transistors and its reliability implications
بواسطة: Liu, W. H., وآخرون
منشور في: (2013)

Enabling high performance n-type metal oxide semiconductors at low temperatures for thin film transistors
بواسطة: Tiwari, Nidhi, وآخرون
منشور في: (2020)

Stress-induced leakage current in ultra-thin gate oxide
بواسطة: Ang, Kheng Guan
منشور في: (2008)

Investigation of quasi-breakdown mechanism in ultra-thin gate oxides
بواسطة: Guan, H., وآخرون
منشور في: (2014)

Recent progress on organic semiconductors for thin-film field-effect transistors
بواسطة: Zhang, X., وآخرون
منشور في: (2014)

TWO-DIMENSIONAL SEMICONDUCTOR FIELD-EFFECT TRANSISTORS FOR ENERGY-EFFICIENT COMPUTING VIA METAL CONTACTS AND FERROELECTRIC GATE STACKS ENGINEERING
بواسطة: CHIEN YU-CHIEH
منشور في: (2024)

Effects of mechanical stress on the performance of metal-oxide-semiconductor transistors
بواسطة: Yang, Peizhen
منشور في: (2012)

Valence band structure of ultrathin silicon and germanium channels in metal-oxide-semiconductor field-effect transistors
بواسطة: Low, Tony, وآخرون
منشور في: (2013)

Valence band structure of ultrathin silicon and germanium channels in metal-oxide-semiconductor field-effect transistors
بواسطة: Low, T., وآخرون
منشور في: (2014)