NOVEL MODELLING OF RF AND MICROWAVE GAN HEMT DEVICES

NOVEL MODELLING OF RF AND MICROWAVE GAN HEMT DEVICES

Ph.D

Saved in:

Bibliographic Details
Main Author:	LUO HAORUI
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Theses and Dissertations
Language:	English
Published:	2024
Subjects:	Modelling, gallium nitride, high electronmobility transistors, radio-frequency, microwave
Online Access:	https://scholarbank.nus.edu.sg/handle/10635/249578
Tags:	Add Tag No Tags, Be the first to tag this record!
Institution:	National University of Singapore
Language:	English

Similar Items

Analytical models for channel potential and drain current in AlGaN/GaN HEMT devices
by: Qian, Haisheng, et al.
Published: (2020)

A novel GaN metal-insulator-semiconductor high electron mobility transistor featuring vertical gate structure
by: Sun, Z., et al.
Published: (2021)

FABRICATION AND CHARACTERIZATION OF GALLIUM NITRIDE HIGH ELECTRON MOBILITY TRANSISTOR (HEMT)
by: LIU JINGWEI
Published: (2019)

Effect of post-deposition annealing on the interface electronic structures of Al2O3-Capped GaN and GaN/AlGaN/GaN heterostructure
by: Duan, Tian Li, et al.
Published: (2019)

An Accurate Neural Network-Based Consistent Gate Charge Model for GaN HEMTs by Refining Intrinsic Capacitances
by: Wenrui Hu, et al.
Published: (2021)

Synthesis of GaN nanowires on gold-coated substrates by pulsed laser ablation
by: Ng, D.K.T., et al.
Published: (2014)

Design of a 200 Watt single-ended wideband gallium nitride-high electron mobility transistor power amplifier for wideband code division multiple access basestations
by: Andres, Pierreangelo Philamer
Published: (2009)

HBT characterization and modeling for nonlinear microwave circuit design
by: ZHOU TIANSHU
Published: (2010)

Structural and photoluminescence study of thin GaN film grown on silicon substrate by metalorganic chemical vapor deposition
by: Zhang, J.X., et al.
Published: (2014)

Experimental demonstration of a two-dimensional hole gas in a GaN/AlGaN/GaN based heterostructure by optical spectroscopy
by: Méchin, Loïc, et al.
Published: (2024)

A novel 2.6–6.4 GHz highly integrated broadband GaN power amplifier
by: Liu, Bei, et al.
Published: (2019)

Improved DC performance of AlGaN/GaN high electron mobility transistors using hafnium oxide for surface passivation
by: Liu, C., et al.
Published: (2014)

Growth of gallium nitride pine tree-like nanostructures
by: Tjahjana, Liliana, et al.
Published: (2024)

p-GaN/n-IGZO self-powered ultraviolet photodetector with ultralow dark current and high sensitivity
by: Liao, Yikai, et al.
Published: (2024)

Development of chemical beam epitaxy for the deposition of gallium nitride
by: Kingsley, C.R., et al.
Published: (2014)

Antireflective GaN nanoridge texturing by metal-assisted chemical etching via a thermally dewetted Pt catalyst network for highly responsive ultraviolet photodiodes
by: Liao, Yikai, et al.
Published: (2023)

Prediction of overshoot and crosstalk of low-voltage GaN HEMT using analytical model
by: Wu, Yingzhe, et al.
Published: (2022)

Efficient method for heterojunction bipolar transistor model parameter extraction based on correlation between extrinsic and intrinsic elements
by: Ooi, B.L., et al.
Published: (2014)

Six-parameter DC GaAs FET model for nonlinear circuit simulation
by: Cao, J., et al.
Published: (2014)

InAlN/GaN HEMTs on Si With High fT of 250 GHz
by: Xing, Weichuan, et al.
Published: (2020)

DESIGN, SIMULATION AND FABRICATION OF ALGAN/GAN NORMALLY-OFF HIGH ELECTRON MOBILITY TRANSISTORS WITH INVESTIGATION ON TEMPERATURE STABILITY
by: WANG YUN-HSIANG
Published: (2016)

A sub-terahertz broadband detector based on a GaN high-electron-mobility transistor with nanoantennas
by: Hou, H, et al.
Published: (2020)

Strategic research on RF and microwave
by: Ng, Geok Ing, et al.
Published: (2008)

STUDY OF TRAPPING EFFECTS IN ALGAN/GAN MOSHEMTS
by: PANNIRSELVAM S/O SOMASUNTHARAM
Published: (2016)

Source of two-dimensional electron gas in unintentionally doped AlGaN/GaN multichannel high-electron-mobility transistor heterostructures
by: Lingaparthi, R., et al.
Published: (2021)

RAMAN SCATTERING IN GALLIUM NITRIDE GROWN BY METAL-ORGANIC CHEMICAL VAPOR DEPOSITIO
by: LV PENGCHENG
Published: (2019)

Uniaxial strain effect on the electronic and optical properties of wurtzite GaN-AlGaN quantum-well lasers
by: Yeo, Y.C., et al.
Published: (2014)

Photonic generation of microwave signal with capability of arbitrary phase shifting using XPM in HNLF
by: Feng, Zhenhua, et al.
Published: (2018)

Dielectric dispersion and superior thermal characteristics in isotope-enriched hexagonal boron nitride thin films : evaluation as thermally self-dissipating dielectrics for GaN transistors
by: Chng, Soon Siang, et al.
Published: (2020)

EMERGING BACK-END-OF-LINE COMPATIBLE INDIUM GALLIUM ARSENIDE AND INDIUM-GALLIUM-ZINC-OXIDE FIELD EFFECT TRANSISTORS FOR 3D MONOLITHIC INTEGRATION
by: WANG CHENGKUAN
Published: (2024)

High-permittivity dielectric stack on gallium nitride formed by silane surface passivation and metal-organic chemical vapor deposition
by: Liu, X., et al.
Published: (2014)

Performance analysis of HfO2/InAlN/AlN/GaN HEMT with AlN buffer layer for high power microwave applications
by: Murugapandiyan, P., et al.
Published: (2020)

Ion-induced nitridation of GaAs(1 0 0) surface
by: Li, Y.G., et al.
Published: (2014)

Low stress silicon nitride layers for MEMS applications
by: Iliescu, C., et al.
Published: (2014)

Improved reliability of AlGaN/GaN-on-Si high electron mobility transistors (HEMTs) with high density silicon nitride passivation
by: Sasangka, W. A., et al.
Published: (2017)

Graphene-based transparent conductive electrodes for GaN-based light emitting diodes: Challenges and countermeasures
by: Wang, Liancheng, et al.
Published: (2016)

Reactive atom beam deposition of boron nitride ultrathin films and nanoparticles using borazine
by: Loh, K.P., et al.
Published: (2014)

An Evolutionary Multilayer Perceptron-Based Large-Signal Model of GaN HEMTs Including Self-Heating and Trapping Effects
by: Wenrui Hu, et al.
Published: (2021)

ADVANCED MODELLING OF GaAs HBTs AND GaN HEMTs FOR RF APPLICATIONS
by: HU WENRUI
Published: (2022)

Investigation of the role of pre-existing oxide in the initial degradation mechanism in AlGaN/GaN HEMTs under ON-state stress
by: Tan, H. T., et al.
Published: (2024)