Nanoscaling of phase change memory cells for high speed memory applications

Nanoscaling of phase change memory cells for high speed memory applications

10.1143/JJAP.48.04C060

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Bibliographic Details
Main Authors:	Wang, W., Shi, L., Zhao, R., Loke, D., Lim, K.G., Lee, H.K., Chong, T.C.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Article
Published:	2014
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/56764
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Institution:	National University of Singapore

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