Poly Flanked VDMOS (PFVDMOS): A superior technology for superjunction devices

• Main Authors: Gan, K.P., Liang, Y.C., Samudra, G.S., Xu, S.M., Yong, L.
• Other Authors: ELECTRICAL & COMPUTER ENGINEERING
• Format: Conference or Workshop Item
• Published: 2014
• Subjects: Superjunction MOS structure; VDMOS
• Online Access: http://scholarbank.nus.edu.sg/handle/10635/71466
• Institution: National University of Singapore

10.1109/PESC.2001.954439