Effect of surface conditions on the measurement of minority carrier diffusion lengths using the surface photovoltage technique
10.1117/12.405371
Saved in:
Main Authors: | Zhang, Z., Tan, L.S., Koh, S.M., Liu, H.M., Flottmann, D. |
---|---|
其他作者: | ELECTRICAL ENGINEERING |
格式: | Conference or Workshop Item |
出版: |
2014
|
主題: | |
在線閱讀: | http://scholarbank.nus.edu.sg/handle/10635/72597 |
標簽: |
添加標簽
沒有標簽, 成為第一個標記此記錄!
|
相似書籍
-
Determination of minority carrier diffusion lengths in the denuded zones of silicon wafers by surface photovoltage measurements
由: Tan, L.S., et al.
出版: (2014) -
Determination of minority carrier diffusion lengths in semiconductor wafers with non-uniform carrier lifetimes by the surface photovoltage technique
由: Tan, L.S., et al.
出版: (2014) -
Interlaboratory study of eddy-current measurement of excess-carrier recombination lifetime
由: Blum, A.L., et al.
出版: (2016) -
Inter-laboratory study of eddy-current measurement of excess-carrier recombination lifetime
由: Blum, A.L., et al.
出版: (2016) -
Stability and magnitude of photovoltage in ferroelectric (Pb 0.97La0.03)(Zr0.52Ti0.48)O 3 thin films in multi-cycle uv light illumination
由: Qin, M., et al.
出版: (2014)