MOCVD growth and characterization of GaN films with composite intermediate layer buffer on Si substrate

MOCVD growth and characterization of GaN films with composite intermediate layer buffer on Si substrate

10.1002/(SICI)1521-396X(199911)176:13.0.CO;2-Q

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Bibliographic Details
Main Authors:	Zhang, X., Chua, S.J., Feng, Z.C., Chen, J., Lin, J.
Other Authors:	PHYSICS
Format:	Article
Published:	2014
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/80730
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Institution:	National University of Singapore

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