MOCVD growth and characterization of GaN films with composite intermediate layer buffer on Si substrate

MOCVD growth and characterization of GaN films with composite intermediate layer buffer on Si substrate

10.1002/(SICI)1521-396X(199911)176:13.0.CO;2-Q

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書目詳細資料
Main Authors:	Zhang, X., Chua, S.J., Feng, Z.C., Chen, J., Lin, J.
其他作者:	ELECTRICAL ENGINEERING
格式:	Article
出版:	2014
在線閱讀:	http://scholarbank.nus.edu.sg/handle/10635/80730
標簽:	添加標簽沒有標簽, 成為第一個標記此記錄!
機構:	National University of Singapore

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