Some characteristics of the zero-temperature-coefficient capacitance of an MOS capacitor in accumulation
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Saved in:
Main Author: | Ling, C.H. |
---|---|
Other Authors: | ELECTRICAL ENGINEERING |
Format: | Article |
Published: |
2014
|
Online Access: | http://scholarbank.nus.edu.sg/handle/10635/81204 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Institution: | National University of Singapore |
Similar Items
-
Observation of zero temperature coefficient of capacitance in the MOS capacitor
by: Ling, C.H.
Published: (2014) -
Observation of zero temperature coefficient of capacitance in the MOS capacitor
by: Ling, C.H.
Published: (2014) -
Capacitance-voltage measurements on MOS capacitors fabricated on polycrystalline silicon wafers
by: Ling, C.H., et al.
Published: (2014) -
Frequency dependence of MOS capacitance in strong inversion and at elevated temperatures
by: Ling, C.H., et al.
Published: (2014) -
Frequency dependence of MOS capacitance in strong inversion and at elevated temperatures
by: Ling, C.H., et al.
Published: (2014)