Thermal studies on stress-induced void-like defects in epitaxial-CoSi 2 formation
Materials Research Society Symposium - Proceedings
Saved in:
Main Authors: | Ho, C.S., Pey, K.L., Tung, C.H., Tee, K.C., Prasad, K., Saigal, D., Tan, J.J.L., Wong, H., Lee, K.H., Osipowicz, T., Chua, S.J., Karunasiri, R.P.G. |
---|---|
Other Authors: | ELECTRICAL ENGINEERING |
Format: | Article |
Published: |
2014
|
Online Access: | http://scholarbank.nus.edu.sg/handle/10635/81281 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Institution: | National University of Singapore |
Similar Items
-
Uniform void-free epitaxial CoSi 2 formation on STI bounded narrow Si(lOO) lines by template layer stress reduction
by: Ho, C.S., et al.
Published: (2014) -
Nitride-mediated epitaxy of CoSi2 on Si(001)
by: Chong, R.K.K., et al.
Published: (2014) -
Modelling of molecular beam epitaxy thin film growth with void defect formation
by: Narong Chanlek
Published: (2008) -
TEM Study of a RTO Oxide-Interfacial Layer on Epitaxial-Cobalt Silicide (CoSi2) Formation
by: Ng Khim Hong
Published: (2019) -
COSY: COunterfactual SYntax for cross-lingual understanding
by: YU, Sicheng, et al.
Published: (2021)