Ge/Ni-InGaAs solid-state reaction for contact resistance reduction on n + In 0.53Ga 0.47As

10.1143/JJAP.51.02BF06

Saved in:

Bibliographic Details
Main Authors:	Guo, H.X., Kong, E.Y.J., Zhang, X., Yeo, Y.-C.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Article
Published:	2014
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/82403
Tags:	Add Tag No Tags, Be the first to tag this record!
Institution:	National University of Singapore

Description
Summary:	10.1143/JJAP.51.02BF06

Similar Items