Ge/Ni-InGaAs solid-state reaction for contact resistance reduction on n + In 0.53Ga 0.47As

• Main Authors: Guo, H.X., Kong, E.Y.J., Zhang, X., Yeo, Y.-C.
• 其他作者: ELECTRICAL & COMPUTER ENGINEERING
• 格式: Article
• 出版: 2014
• 在線閱讀: http://scholarbank.nus.edu.sg/handle/10635/82403

10.1143/JJAP.51.02BF06