Ge/Ni-InGaAs solid-state reaction for contact resistance reduction on n + In 0.53Ga 0.47As

• Main Authors: Guo, H.X., Kong, E.Y.J., Zhang, X., Yeo, Y.-C.
• Other Authors: ELECTRICAL & COMPUTER ENGINEERING
• Format: Article
• Published: 2014
• Online Access: http://scholarbank.nus.edu.sg/handle/10635/82403
• Institution: National University of Singapore

10.1143/JJAP.51.02BF06