Ge/Ni-InGaAs solid-state reaction for contact resistance reduction on n + In 0.53Ga 0.47As

Ge/Ni-InGaAs solid-state reaction for contact resistance reduction on n + In 0.53Ga 0.47As

10.1143/JJAP.51.02BF06

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Bibliographic Details
Main Authors: Guo, H.X., Kong, E.Y.J., Zhang, X., Yeo, Y.-C.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/82403
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Institution: National University of Singapore

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http://scholarbank.nus.edu.sg/handle/10635/82403

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