Ge/Ni-InGaAs solid-state reaction for contact resistance reduction on n + In 0.53Ga 0.47As

10.1143/JJAP.51.02BF06

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Main Authors:	Guo, H.X., Kong, E.Y.J., Zhang, X., Yeo, Y.-C.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Article
Published:	2014
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/82403
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Institution:	National University of Singapore

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spelling	sg-nus-scholar.10635-824032023-10-29T22:37:11Z Ge/Ni-InGaAs solid-state reaction for contact resistance reduction on n + In 0.53Ga 0.47As Guo, H.X. Kong, E.Y.J. Zhang, X. Yeo, Y.-C. ELECTRICAL & COMPUTER ENGINEERING 10.1143/JJAP.51.02BF06 Japanese Journal of Applied Physics 51 2 PART 2 - 2014-10-07T04:28:59Z 2014-10-07T04:28:59Z 2012-02 Article Guo, H.X., Kong, E.Y.J., Zhang, X., Yeo, Y.-C. (2012-02). Ge/Ni-InGaAs solid-state reaction for contact resistance reduction on n + In 0.53Ga 0.47As. Japanese Journal of Applied Physics 51 (2 PART 2) : -. ScholarBank@NUS Repository. https://doi.org/10.1143/JJAP.51.02BF06 00214922 http://scholarbank.nus.edu.sg/handle/10635/82403 000303481400048 Scopus
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
description	10.1143/JJAP.51.02BF06
author2	ELECTRICAL & COMPUTER ENGINEERING
author_facet	ELECTRICAL & COMPUTER ENGINEERING Guo, H.X. Kong, E.Y.J. Zhang, X. Yeo, Y.-C.
format	Article
author	Guo, H.X. Kong, E.Y.J. Zhang, X. Yeo, Y.-C.
spellingShingle	Guo, H.X. Kong, E.Y.J. Zhang, X. Yeo, Y.-C. Ge/Ni-InGaAs solid-state reaction for contact resistance reduction on n + In 0.53Ga 0.47As
author_sort	Guo, H.X.
title	Ge/Ni-InGaAs solid-state reaction for contact resistance reduction on n + In 0.53Ga 0.47As
title_short	Ge/Ni-InGaAs solid-state reaction for contact resistance reduction on n + In 0.53Ga 0.47As
title_full	Ge/Ni-InGaAs solid-state reaction for contact resistance reduction on n + In 0.53Ga 0.47As
title_fullStr	Ge/Ni-InGaAs solid-state reaction for contact resistance reduction on n + In 0.53Ga 0.47As
title_full_unstemmed	Ge/Ni-InGaAs solid-state reaction for contact resistance reduction on n + In 0.53Ga 0.47As
title_sort	ge/ni-ingaas solid-state reaction for contact resistance reduction on n + in 0.53ga 0.47as
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/82403
_version_	1781784128729907200

Ge/Ni-InGaAs solid-state reaction for contact resistance reduction on n + In 0.53Ga 0.47As

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