The effect of an yttrium interlayer on a Ni germanided metal gate workfunction in SiO2/HfO2

The effect of an yttrium interlayer on a Ni germanided metal gate workfunction in SiO2/HfO2

10.1109/LED.2007.909999

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Bibliographic Details
Main Authors: Yu, H.P., Pey, K.L., Choi, W.K., Dawood, M.K., Chew, H.G., Antoniadis, D.A., Fitzgerald, E.A., Chi, D.Z.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Subjects:
High-κ
Metal gate
Metal gates
Ni germanide (NiGe)
Nickel
Workfunction tuning
Online Access:http://scholarbank.nus.edu.sg/handle/10635/83160
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Institution: National University of Singapore
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spelling sg-nus-scholar.10635-831602024-11-09T00:15:57Z The effect of an yttrium interlayer on a Ni germanided metal gate workfunction in SiO2/HfO2 Yu, H.P. Pey, K.L. Choi, W.K. Dawood, M.K. Chew, H.G. Antoniadis, D.A. Fitzgerald, E.A. Chi, D.Z. ELECTRICAL & COMPUTER ENGINEERING High-κ Metal gate Metal gates Ni germanide (NiGe) Nickel Workfunction tuning 10.1109/LED.2007.909999 IEEE Electron Device Letters 28 12 1098-1101 EDLED 2014-10-07T04:38:00Z 2014-10-07T04:38:00Z 2007-12 Article Yu, H.P., Pey, K.L., Choi, W.K., Dawood, M.K., Chew, H.G., Antoniadis, D.A., Fitzgerald, E.A., Chi, D.Z. (2007-12). The effect of an yttrium interlayer on a Ni germanided metal gate workfunction in SiO2/HfO2. IEEE Electron Device Letters 28 (12) : 1098-1101. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2007.909999 07413106 http://scholarbank.nus.edu.sg/handle/10635/83160 000251429800008 Scopus
institution National University of Singapore
building NUS Library
continent Asia
country Singapore
Singapore
content_provider NUS Library
collection ScholarBank@NUS
topic High-κ
Metal gate
Metal gates
Ni germanide (NiGe)
Nickel
Workfunction tuning
spellingShingle High-κ
Metal gate
Metal gates
Ni germanide (NiGe)
Nickel
Workfunction tuning
Yu, H.P.
Pey, K.L.
Choi, W.K.
Dawood, M.K.
Chew, H.G.
Antoniadis, D.A.
Fitzgerald, E.A.
Chi, D.Z.
The effect of an yttrium interlayer on a Ni germanided metal gate workfunction in SiO2/HfO2
description 10.1109/LED.2007.909999
author2 ELECTRICAL & COMPUTER ENGINEERING
author_facet ELECTRICAL & COMPUTER ENGINEERING
Yu, H.P.
Pey, K.L.
Choi, W.K.
Dawood, M.K.
Chew, H.G.
Antoniadis, D.A.
Fitzgerald, E.A.
Chi, D.Z.
format Article
author Yu, H.P.
Pey, K.L.
Choi, W.K.
Dawood, M.K.
Chew, H.G.
Antoniadis, D.A.
Fitzgerald, E.A.
Chi, D.Z.
author_sort Yu, H.P.
title The effect of an yttrium interlayer on a Ni germanided metal gate workfunction in SiO2/HfO2
title_short The effect of an yttrium interlayer on a Ni germanided metal gate workfunction in SiO2/HfO2
title_full The effect of an yttrium interlayer on a Ni germanided metal gate workfunction in SiO2/HfO2
title_fullStr The effect of an yttrium interlayer on a Ni germanided metal gate workfunction in SiO2/HfO2
title_full_unstemmed The effect of an yttrium interlayer on a Ni germanided metal gate workfunction in SiO2/HfO2
title_sort effect of an yttrium interlayer on a ni germanided metal gate workfunction in sio2/hfo2
publishDate 2014
url http://scholarbank.nus.edu.sg/handle/10635/83160
_version_ 1821215293856284672

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