The effect of an yttrium interlayer on a Ni germanided metal gate workfunction in SiO2/HfO2
10.1109/LED.2007.909999
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Main Authors: | Yu, H.P., Pey, K.L., Choi, W.K., Dawood, M.K., Chew, H.G., Antoniadis, D.A., Fitzgerald, E.A., Chi, D.Z. |
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Other Authors: | ELECTRICAL & COMPUTER ENGINEERING |
Format: | Article |
Published: |
2014
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Subjects: | |
Online Access: | http://scholarbank.nus.edu.sg/handle/10635/83160 |
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Institution: | National University of Singapore |
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