The effect of an yttrium interlayer on a Ni germanided metal gate workfunction in SiO2/HfO2

• Main Authors: Yu, H.P., Pey, K.L., Choi, W.K., Dawood, M.K., Chew, H.G., Antoniadis, D.A., Fitzgerald, E.A., Chi, D.Z.
• Other Authors: ELECTRICAL & COMPUTER ENGINEERING
• Format: Article
• Published: 2014
• Subjects: High-κ; Metal gate; Metal gates; Ni germanide (NiGe); Nickel; Workfunction tuning
• Online Access: http://scholarbank.nus.edu.sg/handle/10635/83160
• Institution: National University of Singapore

10.1109/LED.2007.909999