GaAs p- and n-MOS devices integrated with novel passivation (plasma nitridation and AlN-surface passivation) techniques and ALD-HfO2/TaN gate stack

10.1109/IEDM.2006.346743

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Bibliographic Details
Main Authors:	Gao, F., Lee, S.J., Li, R., Whang, S.J., Balakumar, S., Chi, D.Z., Kean, C.C., Vicknesh, S., Tung, C.H., Kwong, D.-L.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Conference or Workshop Item
Published:	2014
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/83754
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Institution:	National University of Singapore

id	sg-nus-scholar.10635-83754
record_format	dspace
spelling	sg-nus-scholar.10635-837542015-01-30T12:38:54Z GaAs p- and n-MOS devices integrated with novel passivation (plasma nitridation and AlN-surface passivation) techniques and ALD-HfO2/TaN gate stack Gao, F. Lee, S.J. Li, R. Whang, S.J. Balakumar, S. Chi, D.Z. Kean, C.C. Vicknesh, S. Tung, C.H. Kwong, D.-L. ELECTRICAL & COMPUTER ENGINEERING 10.1109/IEDM.2006.346743 Technical Digest - International Electron Devices Meeting, IEDM - TDIMD 2014-10-07T04:44:47Z 2014-10-07T04:44:47Z 2006 Conference Paper Gao, F.,Lee, S.J.,Li, R.,Whang, S.J.,Balakumar, S.,Chi, D.Z.,Kean, C.C.,Vicknesh, S.,Tung, C.H.,Kwong, D.-L. (2006). GaAs p- and n-MOS devices integrated with novel passivation (plasma nitridation and AlN-surface passivation) techniques and ALD-HfO2/TaN gate stack. Technical Digest - International Electron Devices Meeting, IEDM : -. ScholarBank@NUS Repository. <a href="https://doi.org/10.1109/IEDM.2006.346743" target="_blank">https://doi.org/10.1109/IEDM.2006.346743</a> 1424404398 01631918 http://scholarbank.nus.edu.sg/handle/10635/83754 NOT_IN_WOS Scopus
institution	National University of Singapore
building	NUS Library
country	Singapore
collection	ScholarBank@NUS
description	10.1109/IEDM.2006.346743
author2	ELECTRICAL & COMPUTER ENGINEERING
author_facet	ELECTRICAL & COMPUTER ENGINEERING Gao, F. Lee, S.J. Li, R. Whang, S.J. Balakumar, S. Chi, D.Z. Kean, C.C. Vicknesh, S. Tung, C.H. Kwong, D.-L.
format	Conference or Workshop Item
author	Gao, F. Lee, S.J. Li, R. Whang, S.J. Balakumar, S. Chi, D.Z. Kean, C.C. Vicknesh, S. Tung, C.H. Kwong, D.-L.
spellingShingle	Gao, F. Lee, S.J. Li, R. Whang, S.J. Balakumar, S. Chi, D.Z. Kean, C.C. Vicknesh, S. Tung, C.H. Kwong, D.-L. GaAs p- and n-MOS devices integrated with novel passivation (plasma nitridation and AlN-surface passivation) techniques and ALD-HfO2/TaN gate stack
author_sort	Gao, F.
title	GaAs p- and n-MOS devices integrated with novel passivation (plasma nitridation and AlN-surface passivation) techniques and ALD-HfO2/TaN gate stack
title_short	GaAs p- and n-MOS devices integrated with novel passivation (plasma nitridation and AlN-surface passivation) techniques and ALD-HfO2/TaN gate stack
title_full	GaAs p- and n-MOS devices integrated with novel passivation (plasma nitridation and AlN-surface passivation) techniques and ALD-HfO2/TaN gate stack
title_fullStr	GaAs p- and n-MOS devices integrated with novel passivation (plasma nitridation and AlN-surface passivation) techniques and ALD-HfO2/TaN gate stack
title_full_unstemmed	GaAs p- and n-MOS devices integrated with novel passivation (plasma nitridation and AlN-surface passivation) techniques and ALD-HfO2/TaN gate stack
title_sort	gaas p- and n-mos devices integrated with novel passivation (plasma nitridation and aln-surface passivation) techniques and ald-hfo2/tan gate stack
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/83754
_version_	1681089494108864512

GaAs p- and n-MOS devices integrated with novel passivation (plasma nitridation and AlN-surface passivation) techniques and ALD-HfO2/TaN gate stack

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