GaAs p- and n-MOS devices integrated with novel passivation (plasma nitridation and AlN-surface passivation) techniques and ALD-HfO2/TaN gate stack

• المؤلفون الرئيسيون: Gao, F., Lee, S.J., Li, R., Whang, S.J., Balakumar, S., Chi, D.Z., Kean, C.C., Vicknesh, S., Tung, C.H., Kwong, D.-L.
• مؤلفون آخرون: ELECTRICAL & COMPUTER ENGINEERING
• التنسيق: Conference or Workshop Item
• منشور في: 2014
• الوصول للمادة أونلاين: http://scholarbank.nus.edu.sg/handle/10635/83754
• المؤسسة: National University of Singapore

10.1109/IEDM.2006.346743