Thermally robust phosphorous nitride interface passivation for InGaAs self-aligned gate-first n-MOSFET integrated with high-k dielectric

Thermally robust phosphorous nitride interface passivation for InGaAs self-aligned gate-first n-MOSFET integrated with high-k dielectric

10.1109/IEDM.2009.5424354

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Bibliographic Details
Main Authors: Oh, H.J., Lin, J.Q., Suleiman, S.A.B., Lo, G.Q., Kwong, D.L., Chi, D.Z., Lee, S.J.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Conference or Workshop Item
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/84301
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Institution: National University of Singapore
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Summary:10.1109/IEDM.2009.5424354

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