Thermally robust phosphorous nitride interface passivation for InGaAs self-aligned gate-first n-MOSFET integrated with high-k dielectric

• Main Authors: Oh, H.J., Lin, J.Q., Suleiman, S.A.B., Lo, G.Q., Kwong, D.L., Chi, D.Z., Lee, S.J.
• Other Authors: ELECTRICAL & COMPUTER ENGINEERING
• Format: Conference or Workshop Item
• Published: 2014
• Online Access: http://scholarbank.nus.edu.sg/handle/10635/84301
• Institution: National University of Singapore

10.1109/IEDM.2009.5424354