Thermally robust phosphorous nitride interface passivation for InGaAs self-aligned gate-first n-MOSFET integrated with high-k dielectric

Thermally robust phosphorous nitride interface passivation for InGaAs self-aligned gate-first n-MOSFET integrated with high-k dielectric

10.1109/IEDM.2009.5424354

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Main Authors: Oh, H.J., Lin, J.Q., Suleiman, S.A.B., Lo, G.Q., Kwong, D.L., Chi, D.Z., Lee, S.J.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Conference or Workshop Item
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/84301
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Institution: National University of Singapore
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spelling sg-nus-scholar.10635-843012015-01-08T17:30:51Z Thermally robust phosphorous nitride interface passivation for InGaAs self-aligned gate-first n-MOSFET integrated with high-k dielectric Oh, H.J. Lin, J.Q. Suleiman, S.A.B. Lo, G.Q. Kwong, D.L. Chi, D.Z. Lee, S.J. ELECTRICAL & COMPUTER ENGINEERING 10.1109/IEDM.2009.5424354 Technical Digest - International Electron Devices Meeting, IEDM 13.6.1-13.6.4 TDIMD 2014-10-07T04:51:07Z 2014-10-07T04:51:07Z 2009 Conference Paper Oh, H.J.,Lin, J.Q.,Suleiman, S.A.B.,Lo, G.Q.,Kwong, D.L.,Chi, D.Z.,Lee, S.J. (2009). Thermally robust phosphorous nitride interface passivation for InGaAs self-aligned gate-first n-MOSFET integrated with high-k dielectric. Technical Digest - International Electron Devices Meeting, IEDM : 13.6.1-13.6.4. ScholarBank@NUS Repository. <a href="https://doi.org/10.1109/IEDM.2009.5424354" target="_blank">https://doi.org/10.1109/IEDM.2009.5424354</a> 9781424456406 01631918 http://scholarbank.nus.edu.sg/handle/10635/84301 NOT_IN_WOS Scopus
institution National University of Singapore
building NUS Library
country Singapore
collection ScholarBank@NUS
description 10.1109/IEDM.2009.5424354
author2 ELECTRICAL & COMPUTER ENGINEERING
author_facet ELECTRICAL & COMPUTER ENGINEERING
Oh, H.J.
Lin, J.Q.
Suleiman, S.A.B.
Lo, G.Q.
Kwong, D.L.
Chi, D.Z.
Lee, S.J.
format Conference or Workshop Item
author Oh, H.J.
Lin, J.Q.
Suleiman, S.A.B.
Lo, G.Q.
Kwong, D.L.
Chi, D.Z.
Lee, S.J.
spellingShingle Oh, H.J.
Lin, J.Q.
Suleiman, S.A.B.
Lo, G.Q.
Kwong, D.L.
Chi, D.Z.
Lee, S.J.
Thermally robust phosphorous nitride interface passivation for InGaAs self-aligned gate-first n-MOSFET integrated with high-k dielectric
author_sort Oh, H.J.
title Thermally robust phosphorous nitride interface passivation for InGaAs self-aligned gate-first n-MOSFET integrated with high-k dielectric
title_short Thermally robust phosphorous nitride interface passivation for InGaAs self-aligned gate-first n-MOSFET integrated with high-k dielectric
title_full Thermally robust phosphorous nitride interface passivation for InGaAs self-aligned gate-first n-MOSFET integrated with high-k dielectric
title_fullStr Thermally robust phosphorous nitride interface passivation for InGaAs self-aligned gate-first n-MOSFET integrated with high-k dielectric
title_full_unstemmed Thermally robust phosphorous nitride interface passivation for InGaAs self-aligned gate-first n-MOSFET integrated with high-k dielectric
title_sort thermally robust phosphorous nitride interface passivation for ingaas self-aligned gate-first n-mosfet integrated with high-k dielectric
publishDate 2014
url http://scholarbank.nus.edu.sg/handle/10635/84301
_version_ 1681089593368117248

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