Critical review of the current status of thickness measurements for ultrathin SiO 2 on Si Part V: Results of a CCQM pilot study

• Main Authors: Seah, M.P., Spencer, S.J., Bensebaa, F., Vickridge, I., Danzebrink, H., Krumrey, M., Gross, T., Oesterle, W., Wendler, E., Rheinländer, B., Azuma, Y., Kojima, I., Suzuki, N., Suzuki, M., Tanuma, S., Moon, D.W., Lee, H.J., Cho, H.M., Chen, H.Y., Wee, A.T.S., Osipowicz, T., Pan, J.S., Jordaan, W.A., Hauert, R., Klotz, U., Van Der Marel, C., Verheijen, M., Tamminga, Y., Jeynes, C., Bailey, P., Biswas, S., Falke, U., Nguyen, N.V., Chandler-Horowitz, D., Ehrstein, J.R., Muller, D., Dura, J.A.
• Other Authors: PHYSICS
• Format: Article
• Published: 2014
• Subjects: Calibration; Ellipsometry; Gate oxides; GIXRR; Interlaboratory study; MEIS; Neutron reflectometry; NRA; RBS; Silicon dioxide; SIMS; TEM; Thickness measurement; Traceability; XPS
• Online Access: http://scholarbank.nus.edu.sg/handle/10635/96128
• Institution: National University of Singapore

10.1002/sia.1909