Study of diffusion barrier properties of ionized metal plasma (IMP) deposited tantalum (Ta) between Cu and SiO2

Study of diffusion barrier properties of ionized metal plasma (IMP) deposited tantalum (Ta) between Cu and SiO2

10.1016/S0921-5107(99)00517-6

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Bibliographic Details
Main Authors: Lee, Y.K., Maung Latt, K., Jaehyung, K., Osipowicz, T., Lee, K.
Other Authors: PHYSICS
Format: Article
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/98084
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Institution: National University of Singapore
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Summary:10.1016/S0921-5107(99)00517-6

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