Extending Si CMOS: InGaAs and GeSn High Mobility Channel Transistors for Future High Speed and Low Power Applications

بواسطة GONG XIAO
منشور في 2013

Top-Gate Short Channel Amorphous Indium-Gallium-Zinc-Oxide Thin Film Transistors with Sub-1.2 nm Equivalent Oxide Thickness

بواسطة Han, Kaizhen, Samanta, Subhranu, Sun, Chen, Gong, Xiao
منشور في 2022

Bipolar resistive switching and synaptic characteristics modulation at sub-μA current level using novel Ni/SiO_x/W cross-point structure

بواسطة Samanta, Subhranu, Gong, Xiao, Zhang, Panpan, Han, Kaizhen, Fong, Xuanyao
منشور في 2023

Effects of the ratio of inventories, financial structure and market share to profitability ratios: An empirical study on the publicly-listed food and beverage manufacturing compani...

بواسطة Calingasan, Anna Patricia M., Dimapilis, Marielle Christi F., Gong, Xiao Wei
منشور في 2015

Modulation of light absorption in flexible GeSn metal–semiconductor–metal photodetectors by mechanical bending

بواسطة An, Shu, Wu, Shaoteng, Tan, Chuan Seng, Chang, Guo-En, Gong, Xiao, Kim, Munho
منشور في 2021

Unipolar n-Type Conduction in Black Phosphorus Induced by Atomic Layer Deposited MgO

بواسطة Wang, Lin, Liao, Wugang, Xu, Shengqiang, Gong, Xiao, Zhu, Chunxiang, Ang, Kah-Wee
منشور في 2020

Impact of Ti Interfacial Layer on Resistive Switching Characteristics at sub-μA Current Level in SiO_x-Based Flexible Cross-Point RRAM

بواسطة Samanta, Subhranu, Zhang, Panpan, Han, Kaizhen, Gong, Xiao, Chakraborty, Sandipan, Li, Yida, Fong, Xuanyao
منشور في 2023

AIENP-Reinforced DISCO Method for Whole-Tissue 3D Reconstruction of Pulmonary Capillaries

بواسطة Gong, Xiao-Ting, Kok Chan Chong, Liu, Jiaqi, Cheng, Wei, Yang, Jing, Bin Liu
منشور في 2025

Design and fabrication of high-performance multimode interferometer in lithium niobate thin film

بواسطة Chen, Guanyu, da Ng, Jun, Lin, Hong-Lin, Zhang, Gong, Gong, Xiao, Danner, Aaron J.
منشور في 2022

High-speed photo detection at two-micron-wavelength : technology enablement by GeSn/Ge multiple-quantum-well photodiode on 300 mm Si substrate

بواسطة Xu, Shengqiang, Wang, Wei, Huang, Yi-Chiau, Dong, Yuan, Masudy-Panah, Saeid, Wang, Hong, Gong, Xiao, Yeo, Yee-Chia
منشور في 2019

GeSn-on-insulator substrate formed by direct wafer bonding

بواسطة Lee, Kwang Hong, Bao, Shuyu, Wang, Wei, Lei, Dian, Wang, Bing, Gong, Xiao, Tan, Chuan Seng, Yeo, Yee-Chia
منشور في 2016

A route toward high-detectivity and low-cost short-wave infrared photodetection: GeSn/Ge multiple-quantum-well photodetectors with a dielectric nanohole array metasurface

بواسطة Chen, Qimiao, Zhou, Hao, Xu, Shengqiang, Huang, Yi-Chiau, Wu, Shaoteng, Lee, Kwang Hong, Gong, Xiao, Tan, Chuan Seng
منشور في 2023

High-performance back-illuminated Ge₀.₉₂Sn₀.₀₈/Ge multiple-quantum-well photodetector on Si platform for SWIR detection

بواسطة Wu, Shaoteng, Xu, Shengqiang, Zhou, Hao, Jin, Yuhao, Chen, Qimiao, Huang, Yi-Chiau, Zhang, Lin, Gong, Xiao, Tan, Chuan Seng
منشور في 2021

Far-Red Aggregation-Induced Emission Hydrogel-Reinforced Tissue Clearing for 3D Vasculature Imaging of Whole Lung and Whole Tumor

بواسطة Gong, Xiao-Ting, Zhuang, Jiahao, Chong, Kok Chan, Xu, Qun, Ling, Xia, Cao, Lei, Wu, Min, Yang, Jing, Bin Liu
منشور في 2025

Targeted High-Resolution 3D Imaging of Tumor Vasculatures at Different Stages Using Far-Red AIE Nanoparticles Compatible with Tissue Clearing

بواسطة Gong, Xiao-Ting, Dai, Xian-Yin, Cheng, Wei, Bowen Li, Liu, Jiaqi, Chen, Hongjie, Wu, Min, Yang, Jing, Bin Liu
منشور في 2025

Ge₀.₉₂Sn₀.₀₈/Ge multi-quantum-well LEDs operated at 2-μm-wavelength on 12-inch Si substrate

بواسطة Wu, Shaoteng, Zhang, Lin, Wan, Rongqiao, Zhou, Hao, Lee, Kwang Hong, Chen, Qimiao, Huang, Yi-Chiau, Gong, Xiao, Tan, Chuan Seng
منشور في 2023

AlN/GaN/AlGaN-on-Si HEMT achieving 1.3 W/mm at 5 v for 5G FR2 handsets

بواسطة Li, Hanchao, Xie, Hanlin, Xie, Qingyun, Liu, Siyu, Wang, Yue, Wang, Yuxuan, Ranjan, Kumud, Zhuang, Yihao, Gong, Xiao, Ng, Geok Ing
منشور في 2025

Low Subthreshold Swing and High Mobility Amorphous Indium–Gallium–Zinc-Oxide Thin-Film Transistor With Thin HfO2 Gate Dielectric and Excellent Uniformity

بواسطة SAMANTA SUBHRANU, UMESH CHAND, XU SHENGQIANG, HAN KAIZHEN, WU YING, ANNIE KUMAR, LI YIDA, FONG XUANYAO, THEAN VOON YEW, AARON, GONG XIAO
منشور في 2021

Thermal stability of germanium-tin (GeSn) fins

بواسطة Lei, Dian, Lee, Kwang Hong, Bao, Shuyu, Wang, Wei, Masudy-Panah, Saeid, Tan, Chuan Seng, Tok, Eng Soon, Gong, Xiao, Yeo, Yee-Chia
منشور في 2018

Ge₀.₉₅Sn₀.₀₅ gate-all-around p-channel metal-oxide-semiconductor field-effect transistors with sub-3 nm nanowire width

بواسطة Kang, Yuye, Xu, Shengqiang, Han, Kaizhen, Kong, Eugene Y.-J., Song, Zhigang, Luo, Sheng, Kumar, Annie, Wang, Chengkuan, Fan, Weijun, Liang, Gengchiau, Gong, Xiao
منشور في 2022