Modulation of capacitance magnitude by charging/discharging in silicon nanocrystals distributed throughout the gate oxide in MOS structures

Modulation of capacitance magnitude by charging/discharging in silicon nanocrystals distributed throughout the gate oxide in MOS structures

In this work, charge trapping in silicon nanocrystals (nc-Si) distributed throughout the gate oxide in a metal oxide semiconductor (MOS) structure has been studied. This situation is different from the conventional one with nc-Si confined in a narrow layer embedded in the gate oxide. In the latter,...

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書目詳細資料
Main Authors:	Gui, D., Ng, Chi Yung, Chen, Tupei, Liu, Yang, Tse, Man Siu
其他作者:	School of Electrical and Electronic Engineering
格式:	Article
語言:	English
出版:	2010
主題:	DRNTU::Engineering::Electrical and electronic engineering::Nanoelectronics
在線閱讀:	https://hdl.handle.net/10356/101350 http://hdl.handle.net/10220/6428
標簽:	添加標簽沒有標簽, 成為第一個標記此記錄!

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