In 0.49 Ga 0.51 P/GaAs heterojunction bipolar transistors (HBTs) on 200 mm Si substrates : effects of base thickness, base and sub-collector doping concentrations

• Main Authors: Wang, Yue, Lee, Kwang Hong, Loke, Wan Khai, Chiah, Ben Siau, Zhou, Xing, Yoon, Soon Fatt, Tan, Chuan Seng, Fitzgerald, Eugene
• Other Authors: School of Electrical and Electronic Engineering
• Format: Article
• Language: English
• Published: 2019
• Subjects: Transistors; DRNTU::Engineering::Electrical and electronic engineering; Knee Voltage
• Online Access: https://hdl.handle.net/10356/105293; http://hdl.handle.net/10220/47403; http://dx.doi.org/10.1063/1.5058717
• Institution: Nanyang Technological University

We report performance of InGaP/GaAs heterojunction bipolar transistors (HBTs) fabricated on epitaxial films directly grown onto 200 mm silicon (Si) substrates using a thin 100% germanium (Ge) buffer layer. Both buffer layer and device layers were grown epitaxially using metalorganic chemical vapor d...