A novel peripheral circuit for RRAM-based LUT
Resistive random access memory (RRAM) is a promising candidate to substitute static random access memory (SRAM) in lookup table (LUT) design for its high density and non-volatility. RRAM cells are fabricated at backend CMOS process and have negligible area cost. However, the complex peripheral circu...
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| Main Authors: | , , |
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| Other Authors: | |
| Format: | Conference or Workshop Item |
| Language: | English |
| Published: |
2013
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| Online Access: | https://hdl.handle.net/10356/106607 http://hdl.handle.net/10220/17947 |
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| Institution: | Nanyang Technological University |
| Language: | English |