Direct simulation Monte Carlo method of deposition processes

Direct simulation Monte Carlo method of deposition processes

Modifications had been done on the basic DSMC2.fortran program developed by G. A. Bird to approximate the initial deposition profile characteristic of a physical vapor deposition process, whereby little or no surface chemical reaction occurs. In this report, initial deposition growth of PVD Aluminum...

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書目詳細資料
主要作者:	Tan, Chee Hong.
其他作者:	Zhao, Yong
格式:	Theses and Dissertations
語言:	English
出版:	2008
主題:	DRNTU::Engineering::Computer science and engineering::Computing methodologies::Simulation and modeling DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Thin films
在線閱讀:	http://hdl.handle.net/10356/13523
標簽:	添加標簽沒有標簽, 成為第一個標記此記錄!

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