Raman scattering study of GeSn under <1 0 0> and <1 1 0> uniaxial stress

• Main Authors: An, Shu, Tai, Yeh-Chen, Lee, Kuo-Chih, Shin, Sang-Ho, Cheng, H. H., Chang, Guo-En, Kim, Munho
• Other Authors: School of Electrical and Electronic Engineering
• Format: Article
• Language: English
• Published: 2022
• Subjects: Engineering::Electrical and electronic engineering::Semiconductors; GeSn; Strain; Nanomembranes
• Online Access: https://hdl.handle.net/10356/156824
• Institution: Nanyang Technological University

The application of strain into GeSn alloys can effectively modulate the band structures, thus creating novel electronic and photonic devices. Raman spectroscopy is a powerful tool for characterizing strain; however, the lack of Raman coefficient makes it difficult for accurate determination of strai...