Investigation of the photoluminescence and absorption spectrum of GeSn nanoplatelets

Investigation of the photoluminescence and absorption spectrum of GeSn nanoplatelets

Germanium-tin (GeSn) alloys have recently gained attention due to their potential use in optoelectronic devices. In this project will apply the 10-band k.p method to simulate the band structure of GeSn under tensile strain and to obtain photoluminescence and absorption spectra on different strains a...

Saved in:

書目詳細資料
主要作者:	Lim, Sherleen Ting Wei
其他作者:	Fan Weijun
格式:	Final Year Project
語言:	English
出版:	Nanyang Technological University 2023
主題:	Engineering::Electrical and electronic engineering
在線閱讀:	https://hdl.handle.net/10356/167379
標簽:	添加標簽沒有標簽, 成為第一個標記此記錄!

相似書籍

GeSn alloys fabricated by modified sputtering deposition
由: Qian, Li
出版: (2020)

Strain-relaxed GeSn-on-insulator (GeSnOI) microdisks
由: Burt, Daniel, et al.
出版: (2022)

High-performance GeSn photodetector and fin field-effect transistor (FinFET) on an advanced GeSn-on-insulator platform
由: Wang, Wei, et al.
出版: (2019)

Germanium-tin (GeSn) p-channel fin field-effect transistor fabricated on a novel GeSn-on-insulator substrate
由: Lei, Dian, et al.
出版: (2020)

Tensile strained direct bandgap GeSn microbridges enabled in GeSn-on-insulator substrates with residual tensile strain
由: Burt, Daniel, et al.
出版: (2023)

GeSn/GaAs hetero-structure by magnetron sputtering
由: Qian, Li, et al.
出版: (2021)

Thermal stability of germanium-tin (GeSn) fins
由: Lei, Dian, et al.
出版: (2018)

Modulation of light absorption in flexible GeSn metal–semiconductor–metal photodetectors by mechanical bending
由: An, Shu, et al.
出版: (2021)

Enhanced GeSn microdisk lasers directly released on Si
由: Kim, Youngmin, et al.
出版: (2022)

GeSn lateral p-i-n photodetector on insulating substrate
由: Xu, Shengqiang, et al.
出版: (2019)

Surface plasmon enhanced GeSn photodetectors operating at 2 μm
由: Zhou, Hao, et al.
出版: (2021)

Metal-semiconductor-metal GeSn photodetectors on silicon for short-wave infrared applications
由: Ghosh, Soumava, et al.
出版: (2020)

Short-wave infrared cavity resonances in a single GeSn nanowire
由: Kim, Youngmin, et al.
出版: (2023)

Direct bandgap GeSn nanowires enabled with ultrahigh tension from harnessing intrinsic compressive strain
由: Burt, Daniel, et al.
出版: (2022)

1D photonic crystal direct bandgap GeSn-on- insulator laser
由: Joo, Hyo-Jun, et al.
出版: (2022)

The DFT Study of Electronic and Optical Properties of the Surface Functional SiGe, GeSn and GeSn Nanostructures
由: Roohan Thirayatorn, et al.
出版: (2020)

High-efficiency GeSn/Ge multiple-quantum-well photodetectors with photon-trapping microstructures operating at 2 µm
由: Zhou, Hao, et al.
出版: (2020)

Strain profile and size dependent electronic band structure of GeSn/SiSn quantum dots for optoelectronic application
由: Tan, Chuan Seng, et al.
出版: (2015)

Extended-SWIR GeSn LEDs with reduced footprint and efficient operation power
由: Atalla, Mahmoud R. M., et al.
出版: (2023)

Flexible GE/GESN photodetectors with enhanced performance
由: An, Shu
出版: (2023)

All-around HfO₂ stressor for tensile strain in GeSn-on-insulator nanobeam lasers
由: Joo, Hyo-Jun, et al.
出版: (2024)

Biaxial strain effect on band structures and optical properties of GeSn/Ge quantum well
由: Ting, Shi En
出版: (2024)

High-precision wavelength tuning of GeSn nanobeam lasers via dynamically controlled strain engineering
由: Kim, Youngmin, et al.
出版: (2023)

Theoretical gain of strained GeSn[sub 0.02]/Ge[sub 1−x−y[sup ʹ]]Si[sub x]Sn[sub y[sup ʹ]] quantum well laser
由: Zhu, Yuan-Hui, et al.
出版: (2013)

Strain-free GeSn nanomembranes enabled by transfer-printing techniques for advanced optoelectronic applications
由: Tai, Yeh-Chen, et al.
出版: (2021)

Lateral GeSn waveguide-based homojunction phototransistor for next-generation 2000nm communication and sensing applications
由: Kumar, Harshvardhan, et al.
出版: (2023)

Systematic study on photoexcited carrier dynamics related to defects in GeSn Films with low Sn content at room temperature
由: Son, Bongkwon, et al.
出版: (2021)

Effects of high-temperature thermal annealing on GeSn thin-film material and photodetector operating at 2 µm
由: Wu, Shaoteng, et al.
出版: (2021)

Optically pumped low-threshold microdisk lasers on a GeSn-on-insulator substrate with reduced defect density
由: Jung, Yongduck, et al.
出版: (2022)

GeSn/Ge multiquantum-well vertical-cavity surface-emitting p-i-n structures and diode emitters on a 200 mm Ge-on-insulator platform
由: Chen, Qimiao, et al.
出版: (2023)

Raman scattering study of GeSn under <1 0 0> and <1 1 0> uniaxial stress
由: An, Shu, et al.
出版: (2022)

Transfer-printing-enabled GeSn flexible resonant-cavity-enhanced photodetectors with strain-amplified mid-infrared optical responses
由: Tai, Yeh-Chen, et al.
出版: (2023)

High-speed photo detection at two-micron-wavelength : technology enablement by GeSn/Ge multiple-quantum-well photodiode on 300 mm Si substrate
由: Xu, Shengqiang, et al.
出版: (2019)

High-performance GE/GESN photodetectors in near- and mid-infrared range
由: Son, Bongkwon
出版: (2022)

Photo detection and modulation from 1,550 to 2,000 nm realized by GeSn/Ge multiple-quantum-well photodiode on 300-mm Si substrate
由: Zhou, Hao, et al.
出版: (2020)

The effects of strain and composition on the conduction-band offset of direct band gap type-I GeSn/GeSnSi quantum dots for CMOS compatible mid-IR light source
由: Chen, Qimiao, et al.
出版: (2020)

High-performance GeSn photodetector and fin field-effect transistor (FinFET) on an advanced GeSn-on-insulator platform
由: Wang, W., et al.
出版: (2022)

Strain relaxation of germanium-tin (GeSn) fins
由: Kang, Y, et al.
出版: (2020)

Monolithic infrared silicon photonics: the rise of (Si)GeSn semiconductors
由: Moutanabbir, Oussama, et al.
出版: (2023)

Recent advances in single crystal narrow band-gap semiconductor nanomembranes and their flexible optoelectronic device applications: Ge, GeSn, InGaAs, and 2D materials
由: An, Shu, et al.
出版: (2023)