Study of nano-scale Si/SiGe structures for quantum cascade emitters
Silicon is the dominant semiconductor in the microelectronics industry. Over the last 40 years, it has gone through the most amazing technological transformation and growth, which leads to the extraordinary high levels of integrated circuit complexities. The desire to integrate optical and microelec...
Saved in:
Main Author: | Lu, Fen |
---|---|
Other Authors: | Fan Weijun |
Format: | Theses and Dissertations |
Language: | English |
Published: |
2010
|
Subjects: | |
Online Access: | https://hdl.handle.net/10356/41415 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Institution: | Nanyang Technological University |
Language: | English |
Similar Items
-
Study of Sige/Si quantum cascade strutures
by: Wang, Rui
Published: (2010) -
Nanoscale Si/SiGe based quantum well infrared photodetectors
by: Agarwala, Shweta
Published: (2010) -
Interwell coupling effect in Si/SiGe quantum wells grown by ultra high vacuum chemical vapor deposition
by: Wang, Rui, et al.
Published: (2013) -
Nanoscale strained-Si/SiGe and double-gate MOSFET modeling
by: Karthik Chandrasekaran
Published: (2010) -
Light emission from Si-based nano-materials
by: Manik Dua.
Published: (2009)