Study of silicon-carbide power semiconductor devices

• Main Author: Ng, See Hong.
• Other Authors: Tseng King Jet
• Format: Final Year Project
• Language: English
• Published: 2011
• Subjects: DRNTU::Engineering::Electrical and electronic engineering::Semiconductors
• Online Access: http://hdl.handle.net/10356/45965
• Institution: Nanyang Technological University

Silicon carbide (Si-C) has gained tremendous interest as a promising wide-bandgap material for high power and high temperature applications. Substantial progress has been made in the recent years in Si-C power device development. In this project, Si-C Junction Field Effect Transistors (JFET) is stud...