Characteristics and analysis of high speed InGaAs/InP uni-traveling-carrier photodiodes (UTC-PD)
With the development of broadband and high-frequency photonic systems, the photodiode with both high output power and high speed operating characteristics becomes attracti ve. The novel uni-traveling-carrier photodiode (UTC-PD) can realize these characteristics simultaneously. Compared with...
Saved in:
Main Author: | Li, Mengqiong |
---|---|
Other Authors: | School of Electrical and Electronic Engineering |
Format: | Theses and Dissertations |
Language: | English |
Published: |
2015
|
Subjects: | |
Online Access: | http://hdl.handle.net/10356/64768 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Institution: | Nanyang Technological University |
Language: | English |
Similar Items
-
High-speed and high-responsivity InP-based uni-traveling-carrier photodiodes
by: Meng, Qianqian, et al.
Published: (2018) -
High-speed and high-photocurrent InP-based uni-traveling-carrier photodiode
by: Meng, Qianqian
Published: (2017) -
Equivalent circuit model for inp-based uni-traveling-carrier photodiodes with dipole-doped structure
by: Meng, Q. Q., et al.
Published: (2018) -
MOCVD Growth and Fabrication of High Power MUTC Photodiodes Using InGaAs-InP System
by: Singh, Nandan, et al.
Published: (2016) -
Composite step-graded collector of InP/InGaAs/lnP DHBT for minimised carrier blocking
by: Chor, E.F., et al.
Published: (2014)